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Fabrication of Integrated 808 nm Wavelength SLDs With a Ring Seed Source and a Tapered Amplifier

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6 Author(s)
Siyu Zhang ; Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China ; Zhongliang Qiao ; Baoxue Bo ; Xin Gao
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Integrated 808 nm wavelength SLDs with a ring SLD seed source and a tapered amplifier were fabricated. Output power of 400 mW was obtained in continuous wave (CW) mode at room temperature. The full width at half maximum (FWHM) of the emission spectrum is 31 nm.

Published in:

Lightwave Technology, Journal of  (Volume:29 ,  Issue: 24 )

Date of Publication:

Dec.15, 2011

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