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SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation

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6 Author(s)
Grurmann, K. ; Inst. of Comput. & Network Eng., Tech. Univ. Braunschweig, Braunschweig, Germany ; Walter, D. ; Herrmann, M. ; Gliem, F.
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The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.

Published in:

Radiation Effects Data Workshop (REDW), 2011 IEEE

Date of Conference:

25-29 July 2011

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