By Topic

SEE and TID Response of Spansion 512Mb NOR Flash Memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Irom, F. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Nguyen, D.N.

Single event effect (SEE) and total ionizing dose (TID) response for Spansion 512Mb NOR flash memory are reported. Three SEE phenomena were investigated: single event upsets (SEUs), single event functional interrupts (SEFIs), and high current events. TID measurements were performed in two modes: Erase/Program/Read and Read Only.

Published in:

Radiation Effects Data Workshop (REDW), 2011 IEEE

Date of Conference:

25-29 July 2011