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SEE and TID Response of Spansion 512Mb NOR Flash Memory

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2 Author(s)
Farokh Irom ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Duc N. Nguyen

Single event effect (SEE) and total ionizing dose (TID) response for Spansion 512Mb NOR flash memory are reported. Three SEE phenomena were investigated: single event upsets (SEUs), single event functional interrupts (SEFIs), and high current events. TID measurements were performed in two modes: Erase/Program/Read and Read Only.

Published in:

2011 IEEE Radiation Effects Data Workshop

Date of Conference:

25-29 July 2011