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High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate

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6 Author(s)
Kazior, T.E. ; Raytheon Integrated Defense Syst., Andover, MA, USA ; Chelakara, R. ; Hoke, W. ; Bettencourt, J.
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In this work we present recent results on the direct heterogeneous integration of GaN HEMTs and Si CMOS on a silicon substrate. GaN HEMTs whose DC and RF performance are comparable to GaN HEMTs on SiC substrates have been achieved. As a demonstration vehicle we designed and fabricated a GaN amplifier with pMOS gate bias control circuitry (a current mirror) and heterogeneous interconnects. This simple demonstration circuit is a building block for more advanced RF, mixed signal and power conditioning circuits, such as reconfigurable or linearized PAs with in-situ adaptive bias control, high power digital-to-analog converters (DACs), driver stages for on-wafer optoelectronics, and on-chip power distribution networks.

Published in:

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE

Date of Conference:

16-19 Oct. 2011