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Fluorinated \hbox {SrTiO}_{3} as Charge-Trapping Layer for Nonvolatile Memory Applications

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3 Author(s)
X. D. Huang ; Department of Electrical and Electronic Engineering, the University of Hong Kong, Hong Kong ; Johnny K. O. Sin ; P. T. Lai

Charge-trapping properties of SrTiO3 with and without fluorine incorporation are investigated by using an Al/Al2O3/SrTiO3/SiO2/Si structure. The memory device with a fluorinated SrTiO3 film shows promising performance in terms of large memory window (8.8 V) by ±8-V sweeping voltage, large flatband-voltage (VFB) shift (2.5 V) at a low gate voltage of +6 V for 1 ms, negligible VFB shift after 105-cycle program/erase stressing, and improved data retention compared with that with out fluorine treatment. These advantages can be associated with generated deep-level traps, reduced leakage path, and enhanced strength of the film due to the fluorine incorporation.

Published in:

IEEE Transactions on Electron Devices  (Volume:58 ,  Issue: 12 )