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Impact of Alpha Particles on the Electrical Characteristics of TiO _{2} Memristors

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8 Author(s)
Barnaby, H.J. ; Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA ; Malley, S. ; Land, M. ; Charnicki, S.
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Titanium-oxide (TiO2 ) memristors exposed to 1-MeV alpha particles exhibit only minor changes in the electrical response for ion fluencies up to 1014 cm - 2. At higher fluence levels, virgin and off-state devices exhibit measurable increases in current conduction between the two platinum (Pt) electrodes. Analysis, supported by radiation transport and numerical device simulations, suggests that radiation-induced displacement damage in the TiO2 film increases the density of oxygen vacancies, thereby altering both resistivity in the bulk of the transition-metal oxide and the junction characteristics of Pt-TiO2 interface. Nevertheless, the experimental results indicate continued switching functionality of the memristors even after exposure to 1015 cm- 2 alpha particles. The high intrinsic vacancy density in the devices prior to radiation exposure is identified as the primary feature contributing to apparent radiation hardness.

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Nuclear Science, IEEE Transactions on  (Volume:58 ,  Issue: 6 )