Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

A Miniaturized WiMAX Band 4-W Class-F GaN HEMT Power Amplifier Module

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Hae-Chang Jeong ; Dept. of Radio Sci. & Eng., Chungnam Nat. Univ., Daejeon, South Korea ; Hyun-Seok Oh ; Kyung-Whan Yeom

In this paper, the design and fabrication of a miniaturized 4-W power amplifier for the WiMAX frequency band (2.3-2.7 GHz) is presented. The selected active device is a commercially available GaN HEMT chip from TriQuint Semiconducotr Inc., Hillsboro, OR. The optimum input and output impedances of the GaN HEMT at fundamental frequency are extracted using a custom designed tuning jig. A novel output matching network for class-F operation is proposed and designed using the measured impedances. For integration in a small package, the input and output matching networks are implemented using spiral inductors and interdigital capacitors, and their dimensions were determined using electromagnetic simulation. The fabricated power amplifier is 4.4 × 4.4 mm2 and has an efficiency above 50% and harmonic suppression above 40 dBc for second and third harmonics at an output power of 36 dBm.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:59 ,  Issue: 12 )