Referenced Items are not available for this document.
In this paper, the design and fabrication of a miniaturized 4-W power amplifier for the WiMAX frequency band (2.3-2.7 GHz) is presented. The selected active device is a commercially available GaN HEMT chip from TriQuint Semiconducotr Inc., Hillsboro, OR. The optimum input and output impedances of the GaN HEMT at fundamental frequency are extracted using a custom designed tuning jig. A novel output matching network for class-F operation is proposed and designed using the measured impedances. For integration in a small package, the input and output matching networks are implemented using spiral inductors and interdigital capacitors, and their dimensions were determined using electromagnetic simulation. The fabricated power amplifier is 4.4 × 4.4 mm2 and has an efficiency above 50% and harmonic suppression above 40 dBc for second and third harmonics at an output power of 36 dBm.
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:59
,
Issue:
12
)
Date of Publication: Dec. 2011
- Page(s):
- 3184 - 3194
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 12408779
- Digital Object Identifier :
- 10.1109/TMTT.2011.2169422
- Product Type:
- Journals & Magazines
- Date of Publication :
- 26 October 2011
- Date of Current Version :
- 12 December 2011
- Issue Date :
- Dec. 2011
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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