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Extending the Best Linear Approximation to Characterize the Nonlinear Distortion in GaN HEMTs

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4 Author(s)
Thorsell, M. ; GigaHertz Centre, Chalmers Univ. of Technol., Göteborg, Sweden ; Andersson, K. ; Pailloncy, G. ; Rolain, Y.

In this paper, the best linear approximation (BLA) is extended to include second-order nonlinearities. This extension is particularly useful for the analysis of low-frequency (LF) distortion due to self-mixing. The self-mixing of a modulated signal due to even-order nonlinear distortion creates a spectrum around dc, as well as around the high order even harmonics. The frequency response at dc can be used to determine long-term memory effects such as trapping and self-heating. The extended BLA is extracted for a GaN-based HEMT to analyze the LF distortion and demonstrate the possibilities with the proposed method.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:59 ,  Issue: 12 )