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This work presents the design of two broad-band mm-wave power amplifiers utilizing the 200 GHz 0.25 μm SiGe HBTs. The broad-band gain performance of the power amplifiers has been achieved utilizing cascaded structures. Also a full electro-magnetic simulation is utilized to decrease the discrepancies between the simulated and measured results. The two-stage power amplifier with the cascode topology achieves a flat gain response with a 3 dB gain bandwidth covering almost the entire V-band (50 GHz to 70 GHz). With a 20 dB power gain the maximum output power at 1 dB gain compression and saturation level are 14 dBm and 15 dBm. The measured peak power added efficiency is 15%.