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Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology

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6 Author(s)
Malmqvist, R. ; Swedish Defence Res. Agency (FOI), Linkoping, Sweden ; Samuelsson, C. ; Gustafsson, A. ; Smith, D.
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Wideband millimeter-wave RF-MEMS switch networks and active RF circuits have been monolithically integrated on the same GaAs wafer using an MMIC foundry process technology. GaAs MEMS SPST and SPDT switches present below 1 dB of insertion loss and more than 8 dB/20 dB of isolation up to 75 GHz and 40 GHz, respectively. A compact 1-bit Ka-band GaAs MEMS phase shifter circuit achieve a high figure-of-merit with respect to low in-band losses for a given phase shift. The demonstrated on-wafer integration of two wideband LNAs further show the capabilities of realizing highly integrated (single-chip) reconfigurable active RF-MEMS based MMICs and front-ends at millimeter-wave frequencies.

Published in:

Microwave Workshop Series on Millimeter Wave Integration Technologies (IMWS), 2011 IEEE MTT-S International

Date of Conference:

15-16 Sept. 2011

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