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This paper presents the extraction techniques of the RF feeding structures for accurate modeling of on-chip passive and active components. The presented techniques have been applied for a group of test structures realized in a 90 nm CMOS process and validated through measurements up to 100 GHz. Feeding structures comprising RF probing pads, pad to the transmission line transition and short 50 Ω transmission lines have been modeled with the help of measurements and electromagnetic simulations. The modeled structures have been utilized in the extraction of the test components like MIM capacitors, transistors etc., from the measurements. The comparisons between the foundry based models and the extracted results of the components show a good accuracy validating the applied techniques up to 100 GHz operating frequencies.