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A Quantitative Model for ELDRS and {\rm H}_{2} Degradation Effects in Irradiated Oxides Based on First Principles Calculations

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6 Author(s)
Rowsey, N.L. ; Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA ; Law, M.E. ; Schrimpf, R.D. ; Fleetwood, D.M.
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A physics-based TCAD model for enhanced low-dose-rate sensitivity in linear bipolar devices is developed. Quantitative agreement is found with measured data over a wide range of dose rates and H2 concentrations. Analysis of the degradation effects of individual defect types, the implementation of which has been informed by first principles calculations, provides insights into the mechanisms behind enhanced low-dose-rate effects in different hydrogen environments. The effects of initial defect concentration and location and the energetics of the defect-related reactions are explored. Conclusions are drawn about the roles of molecular hydrogen and hydrogenated defects in the radiation response of these devices.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:58 ,  Issue: 6 )

Date of Publication:

Dec. 2011

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