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Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance

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9 Author(s)
Shinhyuk Yang ; Oxide Electron. Team, Electron. & Telecommun. Res. Inst., Daejeon, South Korea ; Jun Yong Bak ; Sung-Min Yoon ; Min Ki Ryu
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In-Ga-Zn-O thin-film transistors processed at 150°C on laminated polyethylene naphthalate substrates exhibit ing high electrical performances such as a saturation mobility of 24.26 cm2/(V · s), a subthreshold slope of 140 mV/dec, a turn-on voltage Von of -0.41 V, and an on-off ratio of 1.8 × 109 were fabricated. Cool-off-type adhesive was adopted to easily detach the plastic substrate from the carrier holder. Devices also showed highly uniform characteristics with a variation of 0.09 V in turn-on voltage. Stability characteristics under the positive gate bias stress can be enhanced by increasing the annealing time at 150°C.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 12 )