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New Investigation of Hot-Carrier Degradation on RF Small-Signal Parameter and Performance in High- k /Metal-Gate nMOSFETs

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8 Author(s)
Hyun Chul Sagong ; Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, Korea ; Chang Yong Kang ; Chang-Woo Sohn ; Do-Young Choi
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The hot-carrier (HC) effect in high-k/metal-gate nMOSFETs is characterized using radio-frequency (RF) small-signal parameter analysis. To explain a novel HC degradation of RF small-signal parameters, we propose a modified surface channel resistance model that can be applied to not only conventional SiO2/poly-Si-gate nMOSFETs but also high-k/metal-gate nMOSFETs.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 12 )