By Topic

New Investigation of Hot-Carrier Degradation on RF Small-Signal Parameter and Performance in High- k /Metal-Gate nMOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Hyun Chul Sagong ; Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea ; Chang Yong Kang ; Chang-Woo Sohn ; Do-Young Choi
more authors

The hot-carrier (HC) effect in high-k/metal-gate nMOSFETs is characterized using radio-frequency (RF) small-signal parameter analysis. To explain a novel HC degradation of RF small-signal parameters, we propose a modified surface channel resistance model that can be applied to not only conventional SiO2/poly-Si-gate nMOSFETs but also high-k/metal-gate nMOSFETs.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 12 )