By Topic

Modeling the Negative Quadratic VCC of \hbox {SiO}_{2} in MIM Capacitor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Thanh Hoa Phung ; Department of Electrical and Computer Engineering, National University of Singapore, Singapore ; Philipp Steinmann ; Rick Wise ; Yee-Chia Yeo
more authors

The electrical performance of metal-insulator-metal capacitors with thicknesses from 3 to 13 nm was investigated. The magnitude of the negative quadratic voltage coefficient of capacitance (VCC) of was found to be inversely proportional to the square of its thickness. A postdeposition anneal at 400 reduced substantially. An equation based on the orientation polarization of the dipole moments in was derived, which fits the measured normalized capacitance density versus voltage across very well. This suggests that the negative quadratic VCC of is due to the orientation polarization.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 12 )