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Realization and Characterization of Aligned Silicon Nanowire Array With Thin Silver Film

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4 Author(s)
Yung-Jr Hung ; Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol. (NTUST), Taipei, Taiwan ; San-Liang Lee ; Kai-Chung Wu ; Yen-Ting Pan

Wafer-scale fabrication of aligned and uniform silicon nanowire (SiNW) arrays is achieved with good controllability and reproducibility by depositing a thin silver film on a silicon surface prior to wet etching. Fast SiNW formation with a rate of 1.4 μm/min is achieved with optimized process condition, while lower etching rate enables finer SiNW formation in a small open area. Realized SiNWs are demonstrated to have good material and optical properties. With the help of aligned SiNWs, we demonstrate the fabrication of a black nonreflecting silicon surface with a surface reflectivity of around 2-4% uniformly over a 4-in wafer area. This material is expected to be promising as a building block for various applications due to its low-cost and mass-producible fabrication and excellent characteristics.

Published in:

Photonics Journal, IEEE  (Volume:3 ,  Issue: 3 )

Date of Publication:

June 2011

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