By Topic

High-Performance 4H–SiC-Based Metal–Insulator–Semiconductor Ultraviolet Photodetectors With \hbox {SiO}_{2} and \hbox {Al}_{2}\hbox {O}_{3}\hbox {/}\hbox {SiO}_{2} Films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Feng Zhang ; Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China ; Guosheng Sun ; Huolin Huang ; Zhengyun Wu
more authors

4H-SiC-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors with thermally grown SiO2 and evaporated Al2O3/SiO2 (A/S) films are fabricated and demonstrated as normally-off and normally-on mode devices, respectively. Ultralow dark currents of 3.25 × 10-10 and 9.75 × 10-9 A/cm2 and high UV-to-visible rejection ratios of >; 2 × 103 have been achieved at 10 V. The peak responsivities of these devices were separately 30 mA/W at 260 nm and 50 mA/W at 270 nm at 10 V. These results demonstrate that S/4H-SiC and A/S/4H-SiC MIS photodetectors are promising candidates to be applied in optoelectronic integrated circuits.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 12 )