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High-Performance 4H–SiC-Based Metal–Insulator–Semiconductor Ultraviolet Photodetectors With \hbox {SiO}_{2} and \hbox {Al}_{2}\hbox {O}_{3}\hbox {/}\hbox {SiO}_{2} Films

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11 Author(s)
Feng Zhang ; Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China ; Guosheng Sun ; Huolin Huang ; Zhengyun Wu
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4H-SiC-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors with thermally grown SiO2 and evaporated Al2O3/SiO2 (A/S) films are fabricated and demonstrated as normally-off and normally-on mode devices, respectively. Ultralow dark currents of 3.25 × 10-10 and 9.75 × 10-9 A/cm2 and high UV-to-visible rejection ratios of >; 2 × 103 have been achieved at 10 V. The peak responsivities of these devices were separately 30 mA/W at 260 nm and 50 mA/W at 270 nm at 10 V. These results demonstrate that S/4H-SiC and A/S/4H-SiC MIS photodetectors are promising candidates to be applied in optoelectronic integrated circuits.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 12 )

Date of Publication:

Dec. 2011

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