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Long-Endurance Nanocrystal \hbox {TiO}_{2} Resistive Memory Using a TaON Buffer Layer

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5 Author(s)
Cheng, C.H. ; Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Chen, P.C. ; Wu, Y.H. ; Yeh, F.S.
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Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 12 )