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Design and evaluation of a novel enhancement mode FET logic gate configuration in AlGaAs/GaAs/AlGaAs quantum well HEMT technology

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8 Author(s)
Bushehri, E. ; Microelectron. Centre, Middlesex Univ., London, UK ; Thiede, A. ; Bratov, V. ; Staroselsky, V.
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Evaluation of a high-performance logic gate configuration, utilising enhancement mode field effect transistors, is presented in AlGaAs/GaAs/AlGaAs quantum well HEMT technology. The performance of the gate in terms of speed, based on frequency divider measurements, shows a very high-speed operation achieved by utilising the bootstrap effect in the operation of the logic gate. The gate is suitable for the implementation of ultra-high-speed LSI circuits where high speed and noise margin are of critical importance

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Circuits, Devices and Systems, IEE Proceedings -  (Volume:144 ,  Issue: 4 )