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A voltage reference circuit with ultra-low power using subthreshold and body effect techniques

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4 Author(s)
Huimin Zhang ; State Key Lab. of Electron. Thin Films & Integrated Devices, UESTC, Chengdu, China ; Yun Zhou ; Kai Yuan ; Jiang, Yadong

We have demonstrated a voltage reference circuit with ultra-low power by a standard 0.5 μm complementary metal oxide semiconductor (CMOS) N-well process. Two voltages with opposite temperature coefficient are added to produce a reference voltage which is approximately equal to the threshold voltage of a metallic oxide semiconductor field effect transistor (MOFET) at absolute temperature of zero degree. In addition, a current that is proportional to the square of absolute temperature, which can accurately compensate the pre-exponential factor of subthreshold current is introduced. Experimental results show that the proposed circuit can provide a reference voltage with a temperature coefficient of 5.54 ppm/°C over a range from -20 to 85°C, a total supply current of 123 nA, as well as an ultra-low power of only 0.209 μW under a supply voltage of 1.7 V at room temperature.

Published in:

Electrical and Control Engineering (ICECE), 2011 International Conference on

Date of Conference:

16-18 Sept. 2011

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