By Topic

Vertical carrier transport in InGaAsP multiple-quantum-well laser structures: effect of p-doping

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
N. Tessler ; Cavendish Lab., Cambridge Univ., UK ; S. Marcinkevicius ; U. Olin ; C. K. V. Silfvenius
more authors

Carrier transport across p-doped quantum wells (QWs) has been measured by time-resolved photoluminescence for a number of InGaAsP multiple-quantum-well (MQW) laser structures with different structural parameters. The transport times are found to be of the order of tens of picoseconds. This shows that the interwell carrier transport is a limiting factor in high-speed laser modulation schemes. Modeling of the experiments reveals that carrier transport proceeds with a mobility which is carrier density and time dependent. Even at low-carrier densities, the interwell transport is largely limited by the holes. The p-doping of the QW region is found to be ineffective for speeding-up the interwell carrier transport

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:3 ,  Issue: 2 )