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Time-development of transient-carrier temperature, density, and gain spectrum in ultrashort optical pulse excited InGaAs multiquantum-well laser structure

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2 Author(s)
Jian Wang ; Phys. Inst., Stuttgart Univ., Germany ; H. C. Schweizer

We present a novel transient gain-spectra measurement method based on the traditional variable pump-stripe technique. Using the pump-stripe technique with ultra-short optical pulse excitation, time-resolved amplified spontaneous emission spectroscopy of an InGaAs-InGaAsP multiquantum-well (MQW) laser structure was measured, and time-development of the transient optical net gain spectra was obtained accordingly. By fitting the measured gain spectra with a model for band-to-band transitions including momentum conservation and an energy- and density-dependent lifetime broadening, dynamics of band filling, carrier density, carrier temperature and bandgap renormalization have been obtained. This opens the possibility to study simultaneously the influence of transient-carrier density and, in particular, transient-carrier temperature on the transient optical gain. Strong gain compression in the whole gain-spectra region due to transient high carrier temperature after ultra-short pulse injection is clearly demonstrated for the first time

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:3 ,  Issue: 2 )