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Room-temperature lasing operation of GaInNAs-GaAs single-quantum-well laser diodes

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5 Author(s)
Kitatani, T. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Kondow, M. ; Nakatsuka, Shin‐ichi ; Yazawa, Y.
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We have succeeded in demonstrating continuous-wave (CW) operation of GaInNAs-GaAs single-quantum-well (SQW) laser diodes at room temperature (RT). The threshold current density was about 1.4 kA/cm2, and the operating wavelength was approximately 1.18 μm for a broad-stripe geometry. Evenly spaced multiple longitudinal modes were clearly observed in the lasing spectrum. The full-angle-half-power far-field beam divergence measured parallel and perpendicular to the junction plane was 4.5° and 45°, respectively. A high characteristic temperature (T0) of 126 K under CW operation and a small wavelength shift per ambient temperature change of 0.48 nm/°C under pulsed operation were obtained. These experimental results indicate the applicability of GaInNAs to long-wavelength laser diodes with excellent high-temperature performance

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:3 ,  Issue: 2 )