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Modification of modal gain in InGaAs-GaAs quantum-well lasers due to barrier-state carriers

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4 Author(s)
Finzi, D. ; Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel ; Mikhaelashvili, V. ; Tessler, N. ; Eisenstein, G.

This paper describes the effects of barrier-state carriers on the modal gain of InGaAs-GaAs quantum-well (QW) lasers emitting at 980 nm. Experimental studies and numerical simulations are used to examine several drive configurations, each having a unique effect on the laser response. These include compound drive current shapes, optical excitations and fast electrical drives with rise times shorter than 100 ps. We demonstrate that a large barrier-state carrier density affects the index of refraction sufficiently so as to cause a reduction in the confinement factor and modal gain which is large enough to turn the laser off

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:3 ,  Issue: 2 )