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Carrier correlation effects in a quantum-well semiconductor laser medium

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5 Author(s)
W. W. Chow ; Sandia Nat. Labs., Albuquerque, NM, USA ; A. Knorr ; S. Hughes ; A. Girndt
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This paper describes the results of a microscopic treatment of carrier-carrier scattering effects in the optical gain and refractive index spectra of a quantum-well semiconductor laser structure. The approach uses the Semiconductor Maxwell Bloch equations to describe the interaction between the carriers and the laser field, in the presence of many-body Coulomb interactions. Coulomb correlation effects are treated at the level of quantum kinetic theory in the Markovian limit. This approach shows the presence of nondiagonal Coulomb correlation contributions, in addition to the familiar diagonal contributions giving rise to polarization dephasing

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:3 ,  Issue: 2 )