By Topic

Damage-induced spectral perturbations in multilongitudinal-mode semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
L. F. De Chiaro ; Bell Commun. Res., Red Bank, NJ

Mechanical stressing was applied to commercial Fabry-Perot semiconductor lasers to create damage at controlled locations along the optic axis. This damage induces spectral perturbations sinusoidal in wavelength space whose periods are inversely proportional to the distance from the damage to the nearest facet. Experimental and theoretical evidence is presented for a new spectrum-based analytical technique which can provide quantitative information on the location and relative absorption strength of damage sites within the active region. Applications and limitations of this new technique are discussed

Published in:

Journal of Lightwave Technology  (Volume:8 ,  Issue: 11 )