By Topic

28nm metal-gate high-K CMOS SoC technology for high-performance mobile applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

33 Author(s)
S. H. Yang ; Taiwan Semiconductor Manufacturing Company, No. 8, Li-Hsin Rd.6, Science-Based Industrial Park, Hsin-Chu, Taiwan, R.O.C. ; J. Y. Sheu ; M. K. Ieong ; M. H. Chiang
more authors

An industry leading 28nm high-performance mobile SoC technology featuring metal-gate/high-k process is presented. The technology is optimized to offer wide power-to-performance transistor dynamic range and highest wired gate density with superior low-R/ELK interconnects, critical for next generation mobile computing/SOC applications. Through process and design optimization, historical trend is maintained for gate density and SRAM cell sizes. Variations control strategy through process and design collaboration is also described.

Published in:

2011 IEEE Custom Integrated Circuits Conference (CICC)

Date of Conference:

19-21 Sept. 2011