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28nm metal-gate high-K CMOS SoC technology for high-performance mobile applications

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33 Author(s)
Yang, S.H. ; Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan ; Sheu, J.Y. ; Ieong, M.K. ; Chiang, M.H.
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An industry leading 28nm high-performance mobile SoC technology featuring metal-gate/high-k process is presented. The technology is optimized to offer wide power-to-performance transistor dynamic range and highest wired gate density with superior low-R/ELK interconnects, critical for next generation mobile computing/SOC applications. Through process and design optimization, historical trend is maintained for gate density and SRAM cell sizes. Variations control strategy through process and design collaboration is also described.

Published in:

Custom Integrated Circuits Conference (CICC), 2011 IEEE

Date of Conference:

19-21 Sept. 2011