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28nm metal-gate high-K CMOS SoC technology for high-performance mobile applications

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33 Author(s)

Yang, S.H. ; Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan ; Sheu, J.Y. ; Ieong, M.K. ; Chiang, M.H.
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An industry leading 28nm high-performance mobile SoC technology featuring metal-gate/high-k process is presented. The technology is optimized to offer wide power-to-performance transistor dynamic range and highest wired gate density with superior low-R/ELK interconnects, critical for next generation mobile computing/SOC applications. Through process and design optimization, historical trend is maintained for gate density and SRAM cell sizes. Variations control strategy through process and design collaboration is also described.

Published in:
Custom Integrated Circuits Conference (CICC), 2011 IEEE

Date of Conference: 19-21 Sept. 2011

Page(s):: 1 - 5
ISSN :: 0886-5930
Print ISBN:: 978-1-4577-0222-8
INSPEC Accession Number:: 12316526

Conference Location :: San Jose, CA
Digital Object Identifier :: 10.1109/CICC.2011.6055355
Product Type:: Conference Publications

Author(s)

Yang, S.H.
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
Sheu, J.Y. ; Ieong, M.K. ; Chiang, M.H. ; Yamamoto, T. ; Liaw, J.J. ; Chang, S.S. ; Lin, Y.M. ; Hsu, T.L. ; Hwang, J.R. ; Ting, J.K. ; Wu, C.H. ; Ting, K.C. ; Yang, F.C. ; Liu, C.M. ; Wu, I.L. ; Chen, Y.M. ; Chent, S.J. ; Chen, K.S. ; Cheng, J.Y. ; Tsai, M.H. ; Chang, W. ; Chen, R. ; Chen, C.C. ; Lee, T.L. ; Lin, C.K. ; Yang, S.C. ; Sheu, Y.M. ; Tzeng, J.T. ; Lu, L.C. ; Jang, S.M. ; Diaz, C.H. ; Mii, Y.

INSPEC: CONTROLLED INDEXING

CMOS integrated circuits

mobile communication

system-on-chip

INSPEC: NON CONTROLLED INDEXING

SRAM cell sizes

high performance mobile applications

metal gate high K CMOS SoC technology

size 28 nm

wide power to performance transistor dynamic range

wired gate density

IEEE TERMS

CMOS integrated circuits

High K dielectric materials

Logic gates

Metals

Mobile communication

Random access memory

Transistors

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