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High responsivity in integrated optically controlled metal-oxide semiconductor field-effect transistor using directly bonded SiO2-InP

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2 Author(s)
Yamagata, T. ; Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan ; Shimomura, K.

For the first time, high responsivity was obtained from an integrated optically controlled metal-oxide semiconductor field-effect transistor using the direct wafer bonding technique. The integrated structure of the device was composed of an absorption p-i-n photodiode region and a MOSFET. These two regions were bonded using the SiO/sub 2/-InP direct wafer bonding technique. When a laser light with a wavelength of 1.50 /spl mu/m was irradiated on the absorption region, a responsivity of more than 280 A/W was obtained. This is the largest responsivity in an integrated long-wavelength photoreceiver on a Si substrate. This device modulates MOSFET's current by changing the electric field in the absorption region.

Published in:

Photonics Technology Letters, IEEE  (Volume:9 ,  Issue: 8 )

Date of Publication:

Aug. 1997

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