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We report demonstration of a new high-power semiconductor laser technology, the optically pumped semiconductor (OPS) vertical-external-cavity surface-emitting laser (VECSEL). Using diode laser pump, an OPS-VECSEL laser with a strain-compensated InGaAs-GaAsP-GaAs multiquantum-well (MQW) structure operated continuous-wave (CW) near /spl lambda//spl sim/1004 nm with record output power of 0.69 W in a TEM/sub 11/ mode, 0.52 W in a TEM/sub 00/ mode, and 0.37 W coupled to a single-mode fiber. It is feasible to produce greater than 1 W of power in a diffraction-limited circular beam from an efficient, compact, manufacturable and reliable OPS-VECSEL laser.
Date of Publication: Aug. 1997