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Molecular design of hole transport material with various ionization potential for organic light-emitting diode applications

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4 Author(s)
Okutsu, S. ; Tsukuba Res. Labs., Tokyo Ink Manuf. Co. Ltd., Ibaraki, Japan ; Onikubo, T. ; Tamano, M. ; Enokida, Toshio

In this paper, we examine the effects of the properties for hole transport materials (HTM's) on the performance of organic light-emitting diodes (OLED's). The ionization potentials (Ip) of the HTM's could be estimated by the Hammett constant of the substituent. We have synthesized a series of HTM's with various Ip's, which are called FTPD's. The FTFD's have high glass transition temperature above 80°C, because of their fluorene structure. We fabricated double-layer OLED's with the FTPD's. The Ip's of the FTPD's affected the driving voltage, although they did not affect the quantum efficiency

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Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 8 )