Planar heterostructures based on organic semiconductor

Research of multi-layer heterostructure systems utilizing electrically active organic compounds is highly topical issue essential for effective development of new generation of electronic devices. This paper presents the results of particular work in this field focused on rather experimental construction of metal-insulator-semiconductor heterojunctions based on Ta + Ta
2
O
5
electrode system incorporating easily applicable solution processed organic semiconductor, allowing to adjust the interfacial energetic conditions in desired manner. As a result, a well defined rectifying MIS structure with the onset voltage of 1,5 V and the rectifying ratio of 6×10
⁴
has been obtained.