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High-power quantum dot superluminescent diode with integrated optical amplifier section

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5 Author(s)
Wang, Z.C. ; Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing, China ; Jin, P. ; Lv, X.Q. ; Li, X.K.
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A 1.1 μm high-power quantum dot superluminescent diode has been fabricated by using a two-section device structure which consists of a superluminescent section and an optical amplifier section. The device exhibits 380 mW output power with 50 nm bandwidth or 260 mW output power with 66 nm bandwidth.

Published in:

Electronics Letters  (Volume:47 ,  Issue: 21 )