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New high voltage ESD protection devices based on bipolar transistors for automotive applications

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8 Author(s)
Gendron, A. ; Freescale Semicond., Tempe, AZ, USA ; Chai Gill ; Zhan, C. ; Kaneshiro, M.
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A novel ESD protection based on thyristor-like coupled NPN and PNP transistors is presented. This protection is developed in a 0.25 μm SmartMOS® technology targeting 10 to 65 Volts IO pins. TCAD simulations are leveraged to analyze the physical behavior and a comprehensive qualification for automotive applications is presented, including HBM, MM and gun robustness measurements, transient voltage overshoot characterization in TLP, very fast TLP characterization and DC tests from -40 to 175°C. Outstanding performances are reported for the implementation in an ECU product.

Published in:

Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd

Date of Conference:

11-16 Sept. 2011