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Optimization of high Q CMOS-compatible microwave inductors using silicon CMOS technology

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4 Author(s)
Min Park ; Semicond. Technol. Div., Electron. & Telecommun. Res. Inst., Taejeon, South Korea ; Seonghearn Lee ; Hyun Kyu Yu ; Kee Soo Nam

We present the extensive experimental results showing the important dependences of layout parameters on RF performance of rectangular spiral inductors, in order to determine the optimized layout parameters for designing the high Q inductors used in RF ICs at 2 GHz. The detailed comparative analysis is also carried out to investigate substrate effects by varying the substrate resistivity.

Published in:

Microwave Symposium Digest, 1997., IEEE MTT-S International  (Volume:1 )

Date of Conference:

8-13 June 1997

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