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Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides

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7 Author(s)
Esqueda, I.S. ; Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA ; Barnaby, H.J. ; Adell, P.C. ; Rax, B.G.
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Low dose rate experiments on field-oxide-field-effect-transistors (FOXFETs) fabricated in a 90 nm CMOS technology indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. One dimensional (1-D) numerical calculations are used to investigate the key mechanisms responsible for the dose rate dependent buildup of radiation-induced defects in shallow trench isolation (STI) oxides. Calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. The dose rate sensitivity of STI oxides is compared with the sensitivity of bipolar base oxides using model calculations.

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Nuclear Science, IEEE Transactions on  (Volume:58 ,  Issue: 6 )