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Effect of Transistor Density and Charge Sharing on Single-Event Transients in 90-nm Bulk CMOS

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9 Author(s)
Atkinson, N.M. ; Vanderbilt Univ., Nashville, TN, USA ; Ahlbin, J.R. ; Witulski, A.F. ; Gaspard, N.J.
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Heavy-ion experiments on spatially isolated inverters and densely populated inverters demonstrate the effects of transistor density on single-event (SE) transients in bulk CMOS. Increased transistor density reduces SE cross section dramatically while having little impact on transient pulse width.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:58 ,  Issue: 6 )

Date of Publication:

Dec. 2011

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