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Novel a-Si:H AMOLED Pixel Circuit to Ameliorate OLED Luminance Degradation by External Detection

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5 Author(s)
Chih-Lung Lin ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Chia-Che Hung ; Wen-Yen Chang ; Kuan-Wen Chou
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This letter presents a novel hydrogenated amorphous silicon (a-Si:H) active-matrix organic light-emitting diode (OLED) pixel circuit that compensates for the threshold voltage shift of TFT using an internal compensated structure and reduces luminance decay by external detection method, based on the interdependence between the luminance degradation of OLED and the decrease in current under constant voltage bias stress. Experimental results demonstrate that the luminance of the OLED device with the proposed external detection method is more stable than that with the conventional 2T1C pixel circuit.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 12 )

Date of Publication:

Dec. 2011

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