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The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks

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7 Author(s)
BeomYong Kim ; R&D Div., Hynix Semicond. Inc., Icheon, South Korea ; YunHyuck Ji ; SeungMi Lee ; BongSeok Jeon
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The origin of flat band voltage shift phenomena using arsenic ion-implant in High-k/Metal Inserted Poly Si (HK/MIPS) gate stacks was investigated. Arsenic ion-implantations were carried out on HfSiO and HfSiON dielectric layers. Precise arsenic profile was obtained through front and backside SIMS analysis. From the electrical and physical analysis, we verified that the flat band voltage was shifted due to an arsenic dipole formation at high-k/metal interface. The negative shift of 480 mV was obtained with the optimized arsenic ion implant condition.

Published in:

Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European

Date of Conference:

12-16 Sept. 2011