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First demonstration of phase change memory device using solution processed GeTe nanoparticles

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4 Author(s)
Jeyasingh, R.G.D. ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; Caldwell, M.A. ; Milliron, Delia J. ; Wong, H.-S.P.

We present the first demonstration of a functional Phase Change Memory (PCM) device fabricated using solution processed GeTe phase change nanoparticle. The device shows the characteristic memory behavior of crystallization and threshold switching. The cycling endurance of the device is up to 100 cycles. The cells are currently the best performing solution processed phase change material based memory devices reported so far.

Published in:
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European

Date of Conference: 12-16 Sept. 2011

Page(s):
99 - 102
ISSN :
1930-8876
E-ISBN :
978-1-4577-0706-3
Print ISBN:
978-1-4577-0707-0
INSPEC Accession Number:
12306040
Conference Location :
Helsinki
Digital Object Identifier :
10.1109/ESSDERC.2011.6044225
Product Type:
Conference Publications

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