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A sub-ns time-gated CMOS single photon avalanche diode detector for Raman spectroscopy

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9 Author(s)
I. Nissinen ; University of Oulu, Department of Electrical and Information, Engineering, Electronics Laboratory, Oulu, Finland ; J. Nissinen ; A-K. Länsman ; L. Hallman
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A time-gated single photon avalanche diode (SPAD) has been designed and fabricated in a standard high voltage 0.35 μm CMOS technology for Raman spectroscopy. The sub-ns time gating window is used to suppress the fluorescence background typical of Raman studies, and also to minimize the dark count rate in order to maximize the signal-to-noise ratio of the Raman signal. The proposed time-gating technique is applied for measuring the Raman spectra of olive oil with a gate window of 300 ps, and shows significant fluorescence suppression.

Published in:

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

Date of Conference:

12-16 Sept. 2011