By Topic

Single-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC {\hbox {p}}^{+}{\hbox {n}} Diode Irradiated With High-Energy Electrons

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Iwamoto, N. ; Univ. of Electro-Commun. (UEC), Tokyo, Japan ; Koizumi, A. ; Onoda, S. ; Makino, T.
more authors

The defects formed in a 6H-SiC p+n diode by irradiation with 1 MeV electrons have been studied by both single-alpha-particle-induced charge transient spectroscopy and conventional deep level transient spectroscopy (DLTS). The charge collection efficiency was significantly degraded by the electron irradiation. A radiation-induced defect (X) was observed by charge transient spectroscopy. We assign this defect to the electron trap Ei already known in literature and observed by us with DLTS, as its activation energy, 0.50 eV, and annealing behavior, are similar. Moreover, as peaks related to X/Ei disappear after annealing at 250°C and charge collection efficiency also significantly recover after annealing at 250°C, we conclude that this defect is mainly responsible for the decreased charge collection efficiency.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:58 ,  Issue: 6 )