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Memristor Logic Operation Gate With Share Contact RRAM Cell

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4 Author(s)
Wen Chao Shen ; Microelectron. Lab., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Tseng, Yuan Heng ; Chih, Y.-D. ; Chrong Jung Lin

In this letter, we proposed a novel operation of a share contact resistive random access memory (CRRAM) structure to realize a nonvolatile latch (NV latch) with a single transistor. With a share CRRAM structure and sequential input operations, the NV latch as well as and/ or functions have been successfully demonstrated. The new mixing approach of combining memory and logic in a single unit projects the possibility of new applications for VLSI circuits.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 12 )

Date of Publication:

Dec. 2011

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