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This paper investigates the temperature dependence of phonon-scattering-limited mobility μPH for advanced short-channel strained pMOS devices. By using the split CV method and Matthiessen's rule, surface-roughness-limited mobility μSR and μPH are successfully decoupled. This paper indicates that the temperature sensitivity of μPH is proportional to T-1.75 for a neutral stressor and becomes higher when compressive strain is applied. It is explained by the higher optical phonon energy induced by uniaxially compressive strain. Our new findings may also explain the previously reported higher temperature sensitivity of drain current present in uniaxial strained pMOSFETs.
Published in:
Electron Devices, IEEE Transactions on
(Volume:58
,
Issue:
12
)
Date of Publication: Dec. 2011
- Page(s):
- 4427 - 4429
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 12376366
- Digital Object Identifier :
- 10.1109/TED.2011.2167153
- Product Type:
- Journals & Magazines
- Date of Publication :
- 10 October 2011
- Date of Current Version :
- 21 November 2011
- Issue Date :
- Dec. 2011
- Sponsored by :
- IEEE Electron Devices Society
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