Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 5:00 PM ET (12:00 - 21:00 UTC). We apologize for the inconvenience.
By Topic

Beam test of a large area n-on-n silicon strip detector with fast binary readout electronics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

33 Author(s)

A large area (60 mm×60 mm) n-bulk and n-strip readout silicon strip detector prototype was fabricated for the ATLAS SCT detector. Detector modules with a strip length of 12 cm were made by butting two detectors. One of the 12 cm modules was irradiated with protons to a fluence of 1.2×1014 p/cm2, and a beam test was carried out for the non-irradiated and the irradiated detector modules. Efficiency and noise occupancy were analyzed using the beam test data. High efficiency was obtained for both detectors in the bias voltages down to about half the full depletion voltage. The noise occupancy was <2×10-4 for the 12 cm strips. The measurement of the edge region exhibited a difference in the sensitivity under the bias resistance where no extension of the n+-implant was fabricated: the non-irradiated detector showed sensitivity while the irradiated detector did not. The result was confirmed with a laser

Published in:

Nuclear Science, IEEE Transactions on  (Volume:44 ,  Issue: 3 )