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Performance of a double-sided silicon microstrip detector with a wide-pitch n-side readout using a field-plate and a multi p-stop structure

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38 Author(s)
Y. Saitoh ; Seiko Instrum. Inc., Chiba, Japan ; T. Akamine ; M. Inoue ; J. Yamanaka
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The previous double-sided silicon microstrip detector (DSSDs) prototype with integrated coupling capacitors formed by oxide-nitride-oxide (ONO) dielectric film showed band-to-band tunneling (BET) current at the field-plate structure for the N+ strip, which represented a limitation of the biasing configuration. We report improved characteristics of the modified field-plate structure and the wide-pitch n-side readout using a multi p-stop structure combined thereon

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IEEE Transactions on Nuclear Science  (Volume:44 ,  Issue: 3 )