By Topic

21-dB gain ultra-wideband complementary metal-oxide semiconductor low-noise amplifier with current-reuse technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ham, J.-H. ; Dept. of Electr. & Comput. Eng., Hanyang Univ., Seoul, South Korea ; Lee, J.-Y. ; Yun, T.-Y.

A high-gain and wideband low-noise amplifier (LNA) employing a current-reuse technique is proposed. The current-reuse technique adopted at the first stage yields an exceptionally high gain due to the summation of n-type metal-oxide semiconductor (MOS) and p-type MOS transconductances, showing wide input matching with the aid of source inductors and load effects. The proposed LNA achieves better than 10-dB input return loss from 3.0 to 9.2-GHz, a minimum noise figure of 2.9-dB, a maximum power gain of 21-dB, a gain-bandwidth product of 554-GHz and a figure of merit of 31.8-GHz/mW while consuming 12.8-mW from 7.1-mA and 1.8-V. The proposed LNA is fabricated using a 0.18-μm complementary MOS process.

Published in:

Microwaves, Antennas & Propagation, IET  (Volume:5 ,  Issue: 12 )