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The microstructure and resistance switching characteristics of polycrystalline ZnO-Nb2O5 thin films prepared by the sol-gel method on indium tin oxide (ITO)/glass substrates at different annealing temperatures followed by annealing in oxygen have been investigated. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. The Pt/ZnO-Nb2O5/ITO/glass device exhibits reversible and steady bistable resistance switching behaviour with a narrow dispersion of resistance states and switching voltages. The resistance ratios of high-resistance state to low-resistance state were in the range of 1-2 orders of magnitude within 200 test cycles.