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Resistance-switching behaviour in ZnO-Nb2O5 thin films for non-volatile memory application

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2 Author(s)
Cheng-Hsing Hsu ; Department of Electrical Engineering, National United University ; Shu-Fong Yan

The microstructure and resistance switching characteristics of polycrystalline ZnO-Nb2O5 thin films prepared by the sol-gel method on indium tin oxide (ITO)/glass substrates at different annealing temperatures followed by annealing in oxygen have been investigated. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. The Pt/ZnO-Nb2O5/ITO/glass device exhibits reversible and steady bistable resistance switching behaviour with a narrow dispersion of resistance states and switching voltages. The resistance ratios of high-resistance state to low-resistance state were in the range of 1-2 orders of magnitude within 200 test cycles.

Published in:

IET Micro & Nano Letters  (Volume:6 ,  Issue: 9 )