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A 60 GHz Broadband Low-Noise Amplifier With Variable-Gain Control in 65 nm CMOS

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4 Author(s)
Yi-Keng Hsieh ; Grad. Inst. of Electron. Eng. & Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Jing-Lin Kuo ; Huei Wang ; Liang-Hung Lu

A 60 GHz low-noise amplifier (LNA) implemented in a 65 nm CMOS process is presented. Due to the use of a gain-boosted input stage and binary controlled attenuators, the LNA exhibits a broadband response and four programmable gain levels from 18.9 to 7.9 dB while maintaining impedance matching at the 60 GHz frequency band. The fabricated circuit consumes a dc current of 25 mA from a 1.8 V supply.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:21 ,  Issue: 11 )