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A 60 GHz low-noise amplifier (LNA) implemented in a 65 nm CMOS process is presented. Due to the use of a gain-boosted input stage and binary controlled attenuators, the LNA exhibits a broadband response and four programmable gain levels from 18.9 to 7.9 dB while maintaining impedance matching at the 60 GHz frequency band. The fabricated circuit consumes a dc current of 25 mA from a 1.8 V supply.
Date of Publication: Nov. 2011