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Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices

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5 Author(s)
Huang, S. ; Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA ; Semichaevsky, A.V. ; Webster, L. ; Johnson, H.T.
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We examine the influence of the wetting layers (WLs) and the quantum dot (QD) size distribution on the sub-bandgap external quantum efficiency (EQE) of QD solar cells. We use a finite-element Schrödinger-Poisson model that considers QD and wetting layer shapes, sizes, and spacings from cross-sectional scanning tunneling and atomic force micrographs. A comparison between experiments and computations reveals an insignificant contribution of the WL to the sub-bandgap EQE and a broadening of sub-bandgap EQE associated with a variation in QD sizes in the growth direction.

Published in:

Journal of Applied Physics  (Volume:110 ,  Issue: 7 )